65 nanometer technology for the mobile platform

Intel's 65-nanometer (the nanometer is part of 1 billionth (10-9) meters per meter) technology provides a better combination of power consumption and performance than Intel currently uses
Its 90-nanometer process gives Intel chip designers more options for designing circuit density, performance, and power consumption to meet the needs of users of battery-dependent devices.

 

“People are looking for mobile platforms that maximize battery life,” said Mooly Eden, vice president and general manager, Intel Mobile Platforms Group. “The development of such tools is expected from the technology currently under development. We will design the mobile platforms of the future by taking full advantage of our two state-of-the-art 65-nanometer processes. ”

 

One of the key issues in reducing the power consumption of chips is the development of transistors, which is an important aspect due to mobile and battery-powered devices. Microscopic transistors consume electricity even when turned off, causing no small headaches for the entire industry.

 

“The number of transistors on each chip can exceed one billion, so it’s understandable how the development of transistors can have a positive impact on the entire device,” said Mark Bohr, head of Intel Process Architecture and Integration. “Testing of energy-saving chips made with Intel 65-nanometer technology has shown that the‘ leakage ’of transistors is roughly a thousand times smaller than for products leaving the traditional manufacturing process. This saves huge energy for users whose devices are built on this technology.

 

 

Intel’s 65nm manufacturing technology includes a number of significant transistor modifications that allow for lower power consumption while delivering industry-leading performance. Transistor modifications have significantly reduced the amount of leakage current. Decreasing transistor leakage can be attributed to lower power consumption and increased battery life.

 

 

Intel's 65-nanometer technology combines higher-power, lower-power transistors, Intel's biased silicon, high-speed copper-based jumpers, and low-k-dielectric insulation. Processors built with 65nm manufacturing technology allow Intel to double the number of transistors that can be built on a single chip today (using Intel’s 90nm technology).

 

Intel’s 65-nanometer processors will feature 35-nanometer gate-length transistors, which will be the smallest yet most powerful CMOS transistors in mass production. By comparison, the most advanced transistors manufactured today are found in Intel® Pentium® 4 processors, which are 50 nm. Small and fast transistors are the main building blocks of very fast processors. 

 

Intel uses this second-generation, high-performance stretched silicon for 65nm technology. By using stressed silicon, the current flows at a higher speed, thus increasing the speed of the transistors and increasing the manufacturing cost by only two percent.

 

For more information about Intel technology, see www.intel.com/technology page.