DDR3 memories are already at 30 nm

Samsung is also planning further high-volume upgrades by the end of the year.

Samsung has begun mass production of 2 Gbit memory chips at 30 nm. As a result, consumption and operating voltage have been significantly reduced. This means that a clock of up to 1,35 MHz is available at 1.866 volts and 1,5 MHz at 2.133 volts. Compared to previous chips manufactured at 50 nm, energy savings of up to 20% can be achieved on the server front. However, the manufacturer doesn’t stop there and they want to introduce 4Gbit chips by the end of this year, which can now produce 8GB modules on desktop and notebook lines, while for servers, the capacity of a module can reach 32GB.

Modules with current 2 Gbit chips will be available in 2, 4, and 8 GB capacities, but no information is yet available on expected prices.