Toshiba drives to 19 nm in the NAND Flash industry
The manufacturer wants to own the smallest and most advanced tile in the world.
A week ago we reported about that Intel and NAND Flash chips manufactured at 20 nm in a joint venture with Micron under the name IM Flash Technologies. Now Toshiba has proudly announced that they want to go one step further and use a 20 nm process instead of 19 nm. As a result, the area of such an MLC (Multi Level Cell) type chip is the extent of the competing solution, i.e. 118 mm2 and the capacity will be 64 Gbit (8 GB) in the same way. The company will start shipping the first samples at the end of this month, with mass production set to begin in the third quarter. This time interval is similar to those reported by IMFT, as they talked about the second half of 2011. Toshiba will also feature a technology called “Toggle DDR2.0,” which will have a beneficial effect on speed. SanDisk, the partner of the said manufacturer, would like to join the group of manufacturers offering 19 sqm NAND Flash chips later this year. The new development will primarily benefit tablets, SSDs and smartphones. The official announcement can be found on the source page.
